In multi-level cells like TLC (triple-level cell), the cell can hold 3 bits by using 8 distinct charge levels (0 to 7), each corresponding to a different number of trapped electrons (000, 001, up to 111). The exact number of electrons per level varies by technology, but in modern NAND, the difference between levels might be as little as 10-100 electrons due to miniaturization.
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This level of DVFS sophistication suggests the ANE can independently scale its frequency and voltage based on workload characteristics, separate from the CPU and GPU power domains.，更多细节参见51吃瓜
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